MESFET´s on a GaAs-on-insulator structure

MESFET´s were fabricated on a GaAs-on-insulator structure which was grown by molecular beam epitaxy (MBE) on a GaAs substrate covered with a crystalline insulator film, CaxSr1-xF2. The gmvalue of 71 mS/mm was obtained for an FET with a gate length of 3 µm. Complete isolation of MESFET´s by island formation of GaAs on the fluoride films was also attained for the first time using a conventional wet etching process.