Title :
MESFET´s on a GaAs-on-insulator structure
Author :
Tsutsui, Kazuo ; Nakazawa, Tadao ; Asano, Tanemasa ; Ishiwara, Hiroshi ; Furukawa, S.
Author_Institution :
Tokyo Institute of Technology, Yokohama, Japan
fDate :
6/1/1987 12:00:00 AM
Abstract :
MESFET´s were fabricated on a GaAs-on-insulator structure which was grown by molecular beam epitaxy (MBE) on a GaAs substrate covered with a crystalline insulator film, CaxSr1-xF2. The gmvalue of 71 mS/mm was obtained for an FET with a gate length of 3 µm. Complete isolation of MESFET´s by island formation of GaAs on the fluoride films was also attained for the first time using a conventional wet etching process.
Keywords :
Dielectrics and electrical insulation; Etching; FETs; Gallium arsenide; High speed integrated circuits; Lattices; MESFETs; Molecular beam epitaxial growth; Substrates; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26629
