• DocumentCode
    1120852
  • Title

    High-speed InGaAs(P)/InP double-heterostructure bipolar transistors

  • Author

    Nottenburg, Richard N. ; Bischoff, J.C. ; Panish, Morton B. ; Temkin, H.

  • Author_Institution
    Bell Communications Research Inc., Red Bank, NJ
  • Volume
    8
  • Issue
    6
  • fYear
    1987
  • fDate
    6/1/1987 12:00:00 AM
  • Firstpage
    282
  • Lastpage
    284
  • Abstract
    Double-heterostructure InGaAs(P)/InP bipolar transistors ranging in emitter size from 5 × 10 to 100 × 150 µm2have been fabricated using a non-self-aligned technology. These transistors exhibit current gains as high as 275 independent of emitter perimeter-to-area ratio. The best frequency of unity current gain was measured in the smallest devices to be 18 GHz. The high-frequency operation was mainly limited by the emitter charging time.
  • Keywords
    Bipolar transistors; Circuits; Contact resistance; Cutoff frequency; DH-HEMTs; Doping; Indium gallium arsenide; Indium phosphide; Photonic band gap; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26631
  • Filename
    1487181
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120852