The plasma characteristics and film formation generated by the electron cyclotron resonance mechanism

Author

Kim, Jung-Hyung ; Kim, Yong-Jin ; Lee, Pyung-Woo ; Song, Sun-Kyu ; Chang, Hong-Young

Author_Institution

Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea

Volume

22

Issue

3

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

235

Lastpage

241

Abstract

Silicon nitride thin film (SiN_x) is deposited onto the 3 inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The plasma parameters from N₂-SiH₄ electron cyclotron resonance plasma are obtained. Radial distribution of radical atom density is determined by optical emission spectroscopy. From the comparison of the uniformities of deposited film thickness, electron density and radical atom density, it was concluded that the uniformity of film thickness is related to that of radical density rather than plasma density. The dependence of the uniformity film thickness on the waveguide mode was also examined

Keywords

Langmuir probes; nitrogen; plasma CVD; plasma density; plasma diagnostics; silicon compounds; ECR plasma; N₂-SiH₄; Si; SiN; SiN_x; electron cyclotron resonance mechanism; electron cyclotron resonance plasma apparatus; electron density; film formation; optical emission spectroscopy; plasma characteristics; plasma density; plasma parameters; radical atom density; uniformity film thickness; waveguide mode; Atom optics; Atomic layer deposition; Character generation; Cyclotrons; Electrons; Optical films; Plasma density; Plasma properties; Resonance; Silicon;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/27.297872

Filename

297872