Title :
High power broadband superluminescent diodes with chirped multiple quantum dots
Author :
Yoo, Y.C. ; Han, I.K. ; Lee, J.I.
Author_Institution :
Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul
Abstract :
A superluminescent diode (SLD) using J-shaped ridge waveguide and chirped multiple InAs quantum dots (QDs) with three different energy bandgap wavelengths, which are controlled by QD size, is demonstrated. The fabricated QD SLDs exhibit high continuous wave output power of 32 mW and wide spectral bandwidth up to 98 nm, covering the range 1084-1182 nm.
Keywords :
III-V semiconductors; energy gap; indium compounds; optical fabrication; optical waveguides; ridge waveguides; semiconductor quantum dots; superluminescent diodes; InAs; J-shaped ridge waveguide; chirped multiple quantum dots; continuous wave output power; energy bandgap wavelengths; power 32 mW; spectral bandwidth; superluminescent diode; wavelength 1084 nm to 1182 nm; wavelength 98 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071583
