DocumentCode :
1120939
Title :
AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process
Author :
Chang, Mau-Chung Frank ; Asbeck, Peter M. ; Wang, K.C. ; Sullivan, G.J. ; Sheng, Neng-Haung ; Higgins, John A. ; Miller, C.L.
Author_Institution :
Rockwell International Science Center, Thousand Oaks, CA
Volume :
8
Issue :
7
fYear :
1987
fDate :
7/1/1987 12:00:00 AM
Firstpage :
303
Lastpage :
305
Abstract :
This paper describes a self-aligned heterojunction-bipolar-transistor (HBT) process based on a simple dual-lift-off method. Transistors with emitter width down to 1.2 µm and base doping up to 1 × 1020/cm3have been fabricated. Extrapolated current gain cutoff frequency ft of 55 GHz and maximum frequency of oscillation 
of 105 GHz have been obtained. Current-mode-logic (CML) ring oscillators with propagation delays as low as 14.2 ps have been demonstrated. These are record performance results for bipolar transistors. The dual-lift-off process is promising for both millimeter-wave devices and large-scale integrated circuit fabrication.
of 105 GHz have been obtained. Current-mode-logic (CML) ring oscillators with propagation delays as low as 14.2 ps have been demonstrated. These are record performance results for bipolar transistors. The dual-lift-off process is promising for both millimeter-wave devices and large-scale integrated circuit fabrication.Keywords :
Bipolar transistors; Cutoff frequency; Doping; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Large scale integration; Millimeter wave devices; Propagation delay; Ring oscillators;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1987.26639
Filename :
1487189
Link To Document :
