Title :
Post-breakdown conduction in ultra-thin HfO2 films in MOS transistors
Author :
Miranda, E. ; Pey, K.L. ; Ranjan, R. ; Tung, C.H.
Author_Institution :
Univ. Autonoma de Barcelona, Barcelona
Abstract :
A compact model for the post-breakdown current in Si/HfO2/TaN/TiN structures suitable for both gate voltage polarities is presented. Positive gate injection is considered to be dominated by the charge generation mechanism within the substrate depletion layer, whereas negative gate injection is simulated using a diode-like model with series resistance correction. The implicit equation for the current- voltage characteristic resulting for this latter mechanism is solved using the Lambert W function.
Keywords :
MOSFET; electric breakdown; elemental semiconductors; hafnium compounds; high-k dielectric thin films; silicon; tantalum compounds; titanium compounds; Lambert W function; MOS transistors; Positive gate injection; Si-HfO2-TaN-TiN; charge generation mechanism; diode-like model; gate voltage polarities; negative gate injection; post-breakdown conduction; series resistance correction; substrate depletion layer; ultra-thin films;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071110
