• DocumentCode
    1120994
  • Title

    Self-aligned silicided (PtSi and CoSi2) ultra-shallow p+/n junctions

  • Author

    Broadbent, E.K. ; Delfino, M. ; Morgan, A.E. ; Sadana, D.K. ; Maillot, P.

  • Author_Institution
    Signetics Corporation, Sunnyvale, CA
  • Volume
    8
  • Issue
    7
  • fYear
    1987
  • fDate
    7/1/1987 12:00:00 AM
  • Firstpage
    318
  • Lastpage
    320
  • Abstract
    Ultra-shallow p+/n junctions (<100 nm) demonstrating excellent I-V characteristics have been fabricated with self-aligned PtSi. Junctions were formed by rapid thermal annealing (RTA) 〈100〉 Si preamorphized with Sn+ and implanted with BF2+. Subsequently, low-temperature RTA in N2of sputter-deposited Pt produced a 55-nm-thick PtSi layer possessing a remarkably smooth surface and interface, and demonstrating excellent resistance to the aqua regia etch solution. The silicided junctions displayed a sheet resistance of 14 Ω/sq with less than -2-nA . cm-2reverse-bias leakage at -5 V. In a comparative scheme, similar junction characteristics were obtained using a self-aligned 39-nm-thick CoSi2overlayer.
  • Keywords
    Annealing; Boron; Contacts; Doping; Radio frequency; Silicidation; Silicides; Silicon; Sputter etching; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26644
  • Filename
    1487194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120994