Title :
Effect of off-axis implant on the characteristics of advanced self-aligned bipolar transistors
Author :
Chuang, Ching-Te ; Li, G.P. ; Ning, Tak H.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
fDate :
7/1/1987 12:00:00 AM
Abstract :
This letter discusses the effect of off-axis implant on the characteristics of advanced self-aligned bipolar transistors utilizing a sidewall-spacer technology. Experimental results are presented to show that as a result of offsetting the base profile with respect to the emitter profile due to the sidewall shadowing effect, the 7° off-axis implant causes orientation-dependent perimeter punchthrough at one of the emitter edges and orientation-dependent perimeter tunneling at the other emitter edge.
Keywords :
Bipolar integrated circuits; Bipolar transistors; Implants; Integrated circuit technology; Lithography; MOSFET circuits; Shadow mapping; Space technology; Surfaces; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26645
