DocumentCode
1121030
Title
9B9 - The theory of semiconductor lasers with consideration of saturation effects
Author
Krokhin, O.N.
Author_Institution
Lebedev Physical Institute, Moscow, USSR
Volume
2
Issue
9
fYear
1966
fDate
9/1/1966 12:00:00 AM
Firstpage
605
Lastpage
607
Abstract
Semiconductor behavior in strong fields having a frequency close to the absorption band is considered. It is proved that only the slowing down and recombination times of four different relaxation times are of importance for weaker fields. In this case, equality of Fermi-level electron and hole quasi-levels to light quantum energy corresponds to a saturation condition. A semiconductor absorption coefficient regarding saturation is calculated.
Keywords
Absorption; Acoustic transducers; Bandwidth; Electrons; Frequency; Gallium arsenide; Laser theory; Laser tuning; Semiconductor diodes; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1966.1074108
Filename
1074108
Link To Document