DocumentCode :
1121069
Title :
9B7 - Direct frequency modulation of a semiconductor laser by ultrasonic waves
Author :
Ripper, J.E. ; Pratt, G.W., Jr. ; Whitney, C.G.
Author_Institution :
Massachusetts Institute of Technology, Cambridge, Mass.
Volume :
2
Issue :
9
fYear :
1966
fDate :
9/1/1966 12:00:00 AM
Firstpage :
603
Lastpage :
605
Abstract :
A discussion is given of frequency modulation of a semiconductor laser using ultrasonic waves. The principle used is the modulation of the dielectric constant of the material by the sound waves. This modulates the laser output due to the refractive index dependence of the mode frequencies. It is shown that a very high index of modulation can be achieved. Experimental results are reviewed for a gallium arsenide diode laser. Limitations of this technique and possible devices are considered.
Keywords :
Acoustic materials; Dielectric constant; Dielectric materials; Frequency modulation; Gallium arsenide; Laser modes; Optical materials; Refractive index; Semiconductor lasers; Semiconductor materials;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1966.1074110
Filename :
1074110
Link To Document :
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