• DocumentCode
    1121086
  • Title

    High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond

  • Author

    Geis, M.W. ; Rathman, D.D. ; Ehrlich, D.J. ; Murphy, R.A. ; Lindley, W.T.

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, MA
  • Volume
    8
  • Issue
    8
  • fYear
    1987
  • fDate
    8/1/1987 12:00:00 AM
  • Firstpage
    341
  • Lastpage
    343
  • Abstract
    Point-contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond. This is the first report of diamond transistors that have power gain. Further, the transistors exhibited power gain at 510°C and the Schottky diodes were operational at 700°C.
  • Keywords
    Boron; Nitrogen; Ohmic contacts; Photonic band gap; Probes; Schottky diodes; Semiconductor diodes; Temperature; Thermal conductivity; Tungsten;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26653
  • Filename
    1487203
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1121086