Title :
A new three-terminal tunnel device
Author :
Banerjee, Sanjay ; Richardson, William ; Coleman, Jim ; Chatterjee, Amitava
Author_Institution :
Texas Instruments Incorporated, Dallas, TX
fDate :
8/1/1987 12:00:00 AM
Abstract :
A Zener effect has been identified in the trench transistor cell (TTC) which is used in Texas Instruments´ 4-Mbit DRAM. This paper discusses a closed-form analytical model for the tunneling current in the TTC. The effect is also verified in a novel planar MOS structure.
Keywords :
Analytical models; Capacitors; Doping; Electrons; Instruments; Photonic band gap; Random access memory; Substrates; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26655
