• DocumentCode
    1121107
  • Title

    A new three-terminal tunnel device

  • Author

    Banerjee, Sanjay ; Richardson, William ; Coleman, Jim ; Chatterjee, Amitava

  • Author_Institution
    Texas Instruments Incorporated, Dallas, TX
  • Volume
    8
  • Issue
    8
  • fYear
    1987
  • fDate
    8/1/1987 12:00:00 AM
  • Firstpage
    347
  • Lastpage
    349
  • Abstract
    A Zener effect has been identified in the trench transistor cell (TTC) which is used in Texas Instruments´ 4-Mbit DRAM. This paper discusses a closed-form analytical model for the tunneling current in the TTC. The effect is also verified in a novel planar MOS structure.
  • Keywords
    Analytical models; Capacitors; Doping; Electrons; Instruments; Photonic band gap; Random access memory; Substrates; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26655
  • Filename
    1487205
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1121107