DocumentCode :
1121115
Title :
X-Band MMIC amplifier on GaAs/Si
Author :
Eron, Murat ; Taylor, Gordon ; Menna, Ray ; Narayan, S. Yegna ; Klatskin, J. ; Klatskin, Jerome
Author_Institution :
SRI International, Princeton, NJ
Volume :
8
Issue :
8
fYear :
1987
fDate :
8/1/1987 12:00:00 AM
Firstpage :
350
Lastpage :
352
Abstract :
A single-stage MMIC feedback amplifier fabricated on GaAs epitaxially grown on high-resistivity Si (6 × 103Ω.cm) will be described. The GaAs active and buffer layers were grown on 4°-off-
Keywords :
Charge carrier density; Dielectric substrates; Distributed parameter circuits; Feedback amplifiers; Frequency; Gallium arsenide; MMICs; Thermal conductivity; Thermal factors; Thermal resistance;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1987.26656
Filename :
1487206
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1121115
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