High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films

Thin-film transistors (TFT´s) were fabricated in low-temperature (550°C) crystallized amorphous LPCVD silicon films. The performance of these devices was found to depend upon the deposition temperature. Low threshold voltages and effective mobilities as high as 32 cm²/V.s are reported for devices fabricated in 150-nm-thick films with maximum processing temperature of 860°C. The performance of these devices is shown to be far superior to devices fabricated in as-deposited polycrystalline silicon films.