Title :
A 20-GHz frequency divider implemented with heterojunction bipolar transistors
Author :
Wang, K.C. ; Asbeck, Peter M. ; Chang, M.F. ; Sullivan, G.J. ; Miller, D.L.
Author_Institution :
Rockwell International Science Center, Thousand Oaks, CA
fDate :
9/1/1987 12:00:00 AM
Abstract :
This paper reports a high-speed frequency divider implemented with AlGaAs/InGaAs/GaAs heterojunction bipolar transistors (HBT´s). The divide-by-four static frequency divider was fabricated with a fully self-aligned dual-lift-off HBT process. A maximum operating frequency of 20.1 GHz was achieved. This is the highest frequency ever reported for static frequency dividers.
Keywords :
Circuits; Dielectrics; Doping; Epitaxial layers; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Molecular beam epitaxial growth; Photonic band gap;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26668
