DocumentCode
1121235
Title
A 20-GHz frequency divider implemented with heterojunction bipolar transistors
Author
Wang, K.C. ; Asbeck, Peter M. ; Chang, M.F. ; Sullivan, G.J. ; Miller, D.L.
Author_Institution
Rockwell International Science Center, Thousand Oaks, CA
Volume
8
Issue
9
fYear
1987
fDate
9/1/1987 12:00:00 AM
Firstpage
383
Lastpage
385
Abstract
This paper reports a high-speed frequency divider implemented with AlGaAs/InGaAs/GaAs heterojunction bipolar transistors (HBT´s). The divide-by-four static frequency divider was fabricated with a fully self-aligned dual-lift-off HBT process. A maximum operating frequency of 20.1 GHz was achieved. This is the highest frequency ever reported for static frequency dividers.
Keywords
Circuits; Dielectrics; Doping; Epitaxial layers; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Molecular beam epitaxial growth; Photonic band gap;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1987.26668
Filename
1487218
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