Title :
Observation of the surface degradation mode of InP/InGaAs APD´s during bias-temperature test
Author :
Sudo, Hiromi ; Suzuki, Masamitsu ; Miyahara, Norio
Author_Institution :
NTT, Atsugi-shi, Kanagawa, Japan
fDate :
9/1/1987 12:00:00 AM
Abstract :
We report the surface degradation mode observed during a bias-temperature (BT) test for InP/InGaAs APD´s. Failure analyses using the light-beam-induced current (LIBIC) method clarify that the degradation is caused by local avalanche multiplication in the guard-ring periphery. Based on the analyses, we propose a failure mechanism.
Keywords :
Aging; Dark current; Degradation; Indium gallium arsenide; Indium phosphide; Optical films; Optical microscopy; Optical surface waves; Testing; Wavelength measurement;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26669
