DocumentCode
1121264
Title
Transistor nonlinearity-dependence on emitter bias current in P-N-P Alloy junction
Author
Fewer, D.
Author_Institution
Texas Instruments Inc., Dallas, Tex
Issue
2
fYear
1958
Firstpage
41
Lastpage
44
Abstract
A method of calculating the nonlinear behavior of class A common emitter transistor amplifiers from linear small signal measurements is given. Experimental results, obtained with a 500-milliwatt p-n-p alloy junction transistor, show the second and third harmonic distortion as a function of emitter bias current and driving source resistance. Distortion, calculated from small signal measurements, is shown for comparison.
Keywords
Charge carriers; Circuits; Conductivity; Current measurement; Distortion measurement; Electrical resistance measurement; Equations; Harmonic distortion; P-n junctions; Space charge;
fLanguage
English
Journal_Title
Audio, IRE Transactions on
Publisher
ieee
ISSN
0096-1981
Type
jour
DOI
10.1109/TAU.1958.1166128
Filename
1166128
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