• DocumentCode
    1121277
  • Title

    N-source/drain compensation effects in submicrometer LDD MOS devices

  • Author

    Hamada, Akemi ; Igura, Yasuo ; Izawa, Ryuichi ; Takeda, Eiji

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    8
  • Issue
    9
  • fYear
    1987
  • fDate
    9/1/1987 12:00:00 AM
  • Firstpage
    398
  • Lastpage
    400
  • Abstract
    N- source/drain compensation effects in LDD devices and p-n junction leakage effects are investigated. In particular, for L_{eff} \\leq 0.3 µm, these effects will become intrinsic constraints on device minituarization. Furthermore, p-n junction leakage was found to cause refresh failures in dynamic VLSI circuits even under reduced power supply voltage.
  • Keywords
    Boron; Circuits; Helium; Hot carrier effects; Impurities; MOS devices; P-n junctions; Power supplies; Very large scale integration; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26673
  • Filename
    1487223
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1121277