• DocumentCode
    1121318
  • Title

    Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

  • Author

    Balestra, Francis ; Cristoloveanu, Sorin ; Benachir, Mohcine ; Brini, Jean ; Elewa, Tarek

  • Author_Institution
    Institut National Polytechnique de Grenoble, Grenoble, France
  • Volume
    8
  • Issue
    9
  • fYear
    1987
  • fDate
    9/1/1987 12:00:00 AM
  • Firstpage
    410
  • Lastpage
    412
  • Abstract
    The double-gate control of silicon-on-insulator (SOI) transistors is used to force the whole silicon film (interface layers and volume) in strong inversion. This original method of transistor operation offers excellent device performance, in particular great increases in subthreshold slope, transconductance, and drain current. A simulation program and experiments on SIMOX structures are used to study the new device.
  • Keywords
    Carrier confinement; Doping profiles; Electrostatics; FETs; MOSFET circuits; Region 1; Scattering; Semiconductor films; Silicon on insulator technology; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26677
  • Filename
    1487227
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1121318