Title :
High-Performance InGaAs/InP Single-Photon Avalanche Photodiode
Author :
Liu, Mingguo ; Hu, Chong ; Bai, Xiaogang ; Guo, Xiangyi ; Campbell, Joe C. ; Pan, Zhong ; Tashima, M.M.
Author_Institution :
Virginia Univ., Charlottesville
Abstract :
In0.53Ga0.47As/InP avalanche photodiodes with very low dark current have been characterized in gated mode for single-photon detection. A 40-mum-diameter single-photon avalanche diodes (SPAD) exhibited high single-photon detection efficiency (SPDE = 45% at 1.31 mum), low dark count rate (DCR = 12 kHz), and low noise-equivalent power (NEP=4.5X 10-17W/Hz1/2 W/Hz) at 200 K and 1.31 mum. A timing resolution of 140 ps was achieved with an SPDE of 45%. In addition, the dark current and DCR of a 4X4 SPAD array are reported.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; infrared detectors; photodetectors; InGaAsP-InP; avalanche photodiode; dark current; single-photon detection; size 1.31 mum; size 40 mum; temperature 200 K; time 140 ps; Avalanche photodiodes; Counting circuits; Cryptography; Dark current; Diodes; Indium gallium arsenide; Indium phosphide; Optical pulses; Optical receivers; Timing; Afterpulsing; array; avalanche photodiodes; dark count rate (DCR); single-photon detection efficiency (SPDE); timing resolution;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2007.903855
