Title :
Laser-recrystallized polycrystalline-silicon thin-film transistors with low leakage current and high switching ratio
Author :
Seki, Shunji ; Kogure, Osamu ; Tsujiyama, Bunjiro
Author_Institution :
Nippon Telegraph and Telephone Corporation, Ibaraki, Japan
fDate :
9/1/1987 12:00:00 AM
Abstract :
Laser-recrystallized polycrystalline-silicon thin-film transistors (poly-Si TFT´s) with offset-gate structures have been fabricated on quartz substrates. Offset-gate structures make it possible to reduce leakage currents to as low as 5 × 10-14A/µm at VD= 10 V, more than two orders of magnitude lower than that in conventional-structure poly-Si TFT´s. Optimization of the dopant concentration in offset-gate regions minimizes degradation of drive current, enabling high switching ratios exceeding 108. Calculations based on the quasi-two-dimensional model indicate that the reduction in leakage current is due to a decrease in lateral electric field strength in the drain depletion region.
Keywords :
Argon; Cleaning; Degradation; Etching; Leakage current; Optical device fabrication; Substrates; Subthreshold current; Thin film transistors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26681