DocumentCode :
1121491
Title :
Microwave MESFET´s fabricated in GaAs layers grown on SOS Substrates
Author :
Turner, G.W. ; Choi, H.K. ; Tsaur, B-Y.
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA
Volume :
8
Issue :
10
fYear :
1987
fDate :
10/1/1987 12:00:00 AM
Firstpage :
460
Lastpage :
462
Abstract :
Device-quality GaAs layers have been grown on silicon-on-sapphire (SOS) substrates by molecular beam epitaxy (MBE). Microwave MESFET\´s (gate length of ~0.8 µm) with transconductance of 140 mS/ mm, 
GHz, and 
GHz have been fabricated in these layers.
GHz, and GHz have been fabricated in these layers.Keywords :
Fabrication; Gallium arsenide; Insulation; MESFETs; MOCVD; Molecular beam epitaxial growth; Optical films; Semiconductor films; Substrates; Transconductance;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1987.26694
Filename :
1487244
Link To Document :
