• DocumentCode
    1121491
  • Title

    Microwave MESFET´s fabricated in GaAs layers grown on SOS Substrates

  • Author

    Turner, G.W. ; Choi, H.K. ; Tsaur, B-Y.

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, MA
  • Volume
    8
  • Issue
    10
  • fYear
    1987
  • fDate
    10/1/1987 12:00:00 AM
  • Firstpage
    460
  • Lastpage
    462
  • Abstract
    Device-quality GaAs layers have been grown on silicon-on-sapphire (SOS) substrates by molecular beam epitaxy (MBE). Microwave MESFET\´s (gate length of ~0.8 µm) with transconductance of 140 mS/ mm, f_{\\max } = 20 GHz, and f_{T} = 8.3 GHz have been fabricated in these layers.
  • Keywords
    Fabrication; Gallium arsenide; Insulation; MESFETs; MOCVD; Molecular beam epitaxial growth; Optical films; Semiconductor films; Substrates; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26694
  • Filename
    1487244
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1121491