DocumentCode
1121591
Title
Depletion-mode GaAs SISFET´s by selective ion implantation
Author
Baratte, H. ; Solomon, Paul M. ; La Tulipe, D.C. ; Jackson, Thomas N. ; Frank, D.J. ; Wright, S.L.
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume
8
Issue
10
fYear
1987
fDate
10/1/1987 12:00:00 AM
Firstpage
486
Lastpage
488
Abstract
Silicon donors have been implanted through the gate and into the (Al,Ga)As insulator of a GaAs SISFET structure in order to produce a negative shift in the device threshold voltage in selective areas of the wafer. The depletion-mode devices fabricated in this manner have controllable threshold voltage, high transconductance (350 mS/mm at 300 K and 380 mS/mm at 77 K for 1-µm gate-length devices), and low gate leakage characteristics. Such devices are suitable for enhance-deplete GaAs SISFET logic circuits.
Keywords
Buffer layers; Gallium arsenide; HEMTs; Implants; Insulation; Ion implantation; Logic circuits; Silicon; Tail; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1987.26703
Filename
1487253
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