Fabrication of monolithic lateral SNS junction structure for Bi-oxide systems

Author

Usuk, T. ; Yoshisat, Y. ; Yasui, I. ; Yaman, K. ; Nakano, S.

Author_Institution

Sanyo Electr. Co. Ltd., Osaka, Japan

Volume

27

Issue

2

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

3094

Lastpage

3097

Abstract

A novel monolithic lateral SNS structure of Bi-oxide systems has been developed in which the compositions of films were locally controlled in the lateral direction. Lateral SNS (BiSrCaCuO/BiSrCuO/BiSrCaCuO) structures which were made from a Ca-F/BSCO layer on MgO substrates have been developed. The BiSrCaCuO area, with a thickness of 150 nm, is composed of a 2212 phase with high crystallinity of the c-axis preferred orientation, and shows zero resistance at 85 K. The BiSrCuO indicates sufficiently low resistivity to be used as a normal barrier for SNS Josephson junctions. BSCO formation using Ca-diffusion into the surfaces of 2201 single crystals was successfully carried out

Keywords

bismuth compounds; calcium compounds; high-temperature superconductors; strontium compounds; superconducting junction devices; 150 nm; 85 K; BiSrCaCuO-BiSrCuO-BiSrCaCuO; Josephson junctions; MgO substrates; high temperature superconductors; normal barrier; Amorphous materials; Annealing; Crystallization; Fabrication; Josephson junctions; Optical films; Plasma temperature; Sputtering; Superconducting devices; Superconducting films;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.133866

Filename

133866