Title :
0.1-µm Gate-length pseudomorphic HEMT´s
Author :
Chao, P.C. ; Tiberio, Richard C. ; Duh, Kuang-Hann G. ; Smith, Phillip M. ; Ballingall, James M. ; Lester, Luke F. ; Lee, Benjamin R. ; Jabra, Amani ; Gifford, George G.
Author_Institution :
General Electric Company, Syracuse, NY
fDate :
10/1/1987 12:00:00 AM
Abstract :
AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (HEMT´s) with a gate length of 0.1 µm have been successfully fabricated. The HEMT´s exhibit a maximum transconductance of 540 mS/mm with excellent pinch-off characteristics. A maximum stable gain (MSG) as high as 18.2 dB was measured at 18 GHz. At 60 GHz the device has demonstrated a minimum noise figure of 2.4 dB with an associated gain of ∼6 dB. These are the best gain and noise results reported to date for HEMT´s.
Keywords :
Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; MESFETs; MODFETs; Millimeter wave transistors; Noise figure; PHEMTs; Performance gain;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26704
