Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation SiGe HBTs

Author

Fleetwood, Zachary E. ; Cardoso, Adilson S. ; Ickhyun Song ; Wilcox, Edward ; Lourenco, Nelson E. ; Phillips, Stanley D. ; Arora, Rajkumar ; Paki-Amouzou, Pauline ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

2915

Lastpage

2922

Abstract

The total ionizing dose response of 4th-generation SiGe HBTs is assessed at both low and high dose rates to evaluate enhanced low dose rate sensitivity (ELDRS) in a new SiGe BiCMOS technology. Both device and circuit results are presented. A bandgap reference circuit topology is chosen to monitor for ELDRS in TID-induced collector current shifts, which have previously been reported in low dose rate studies of SiGe HBTs. The results in this paper also cover previous technology generations from this foundry in order to incorporate a broader view of dose rate effects in SiGe HBTs. No indication of ELDRS was found in any technology generation.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; BiCMOS technology; SiGe; bandgap reference circuit topology; enhanced low dose rate sensitivity; fourth generation HBTs; total ionizing dose response; Degradation; Heterojunction bipolar transistors; Leakage currents; Radiation effects; Sensitivity; Silicon germanium; Bandgap reference (BGR); enhanced low dose rate sensitivity (ELDRS); high dose rate (HDR); low dose rate (LDR); silicon-germanium heterojunction bipolar transistor (SiGe HBT); total ionizing dose (TID);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2361292

Filename

6926868