DocumentCode
1121739
Title
A thin-film bulk-acoustic-wave resonator-controlled oscillator on silicon
Author
Burkland, W.A. ; Landin, A.R. ; Kline, G.R. ; Ketcham, R.S.
Author_Institution
Iowa State University, Ames, IA
Volume
8
Issue
11
fYear
1987
fDate
11/1/1987 12:00:00 AM
Firstpage
531
Lastpage
533
Abstract
A composite ZnO bulk-acoustic-wave thin-film resonator (TFR) has been fabricated on a silicon substrate with a double-diffused BJT. Fabrication techniques unique to the integration of the TFR are discussed. The integrated TFR-BJT structure was configured as a VHF Pierce oscillator circuit with a fundamental frequency of 257 MHz. Phase noise is better than -90 dBc/Hz at a 1-kHz offset. Temperature stability is - 8.5 ppm/°C from 5°C to 65°C and - 3.75 ppm/°C from 55°C to 5°C. The integration of the TFR with active components is viewed as a development toward large-scale RF circuit integration.
Keywords
Fabrication; Frequency; Oscillators; Phase noise; Semiconductor thin films; Silicon; Substrates; Thin film circuits; VHF circuits; Zinc oxide;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1987.26718
Filename
1487268
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