• DocumentCode
    1121749
  • Title

    An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a heavily doped channel

  • Author

    Del Alamo, Jesus A. ; Mizutani, Takashi

  • Author_Institution
    NTT, Kanagawa, Japan
  • Volume
    8
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    534
  • Lastpage
    536
  • Abstract
    An In0.52Al0.48As/n+-In0.53Ga0.47As MIS-type field-effect transistor (FET) with a channel doped at a 7 × 1017cm-3level has been fabricated on an InP substrate. A device with a 2-µm channel length has yielded a maximum transconductance of 152 mS/mm, f_{T} = 12.4 GHz, and f_{\\max } = 50 GHz. At 10 GHz, the maximum available gain is 17.4 dB. The performance of this device shows that heavily doped channel FET\´s are very promising for high-frequency operation.
  • Keywords
    Electron mobility; FETs; Indium phosphide; Insulation; Lattices; MESFETs; Molecular beam epitaxial growth; Substrates; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26719
  • Filename
    1487269
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1121749