DocumentCode
1121751
Title
Fabrication and Properties of Longitudinal and Transverse Current Rectifier Devices Based on Superconducting Films With Arrays of Nanodefects
Author
De Lara, David Perez ; Gonzalez, Elvira M. ; Anguita, Jose V. ; Vicent, Jose L.
Author_Institution
Dept. Fis. Mater., Univ. Complutense, Madrid, Spain
Volume
19
Issue
3
fYear
2009
fDate
6/1/2009 12:00:00 AM
Firstpage
722
Lastpage
725
Abstract
Superconducting rectifiers have been fabricated by electron beam lithography, sputtering and ion etching techniques. The rectifiers are made growing Nb films on top of arrays of submicrometric Ni triangles. In this device, in the superconducting mixed state, injecting an input AC current yields an output DC voltage. This effect is due to the motion of the vortex lattice on periodic asymmetric pinning potentials. The vortex lattice dynamics follows ratchet effect behavior. The device shows two ratchet effects: Longitudinal and transverse. In the longitudinal ratchet effect the DC signal polarity could be switched increasing the applied magnetic field strength. Otherwise, the sign of the transverse effect does not change increasing the applied magnetic field.
Keywords
electron beam lithography; nanotechnology; rectifiers; sputter etching; superconducting arrays; superconducting thin films; asymmetric pinning potentials; electron beam lithography; ion etching techniques; longitudinal current rectifier devices; magnetic field strength; nanodefect arrays; ratchet effect behavior; sputtering; superconducting electronic devices; superconducting films; superconducting rectifiers; transverse current rectifier devices; vortex lattice dynamics; Films; nanotechnology; rectifiers; superconducting devices;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2009.2018060
Filename
5153004
Link To Document