DocumentCode :
1121751
Title :
Fabrication and Properties of Longitudinal and Transverse Current Rectifier Devices Based on Superconducting Films With Arrays of Nanodefects
Author :
De Lara, David Perez ; Gonzalez, Elvira M. ; Anguita, Jose V. ; Vicent, Jose L.
Author_Institution :
Dept. Fis. Mater., Univ. Complutense, Madrid, Spain
Volume :
19
Issue :
3
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
722
Lastpage :
725
Abstract :
Superconducting rectifiers have been fabricated by electron beam lithography, sputtering and ion etching techniques. The rectifiers are made growing Nb films on top of arrays of submicrometric Ni triangles. In this device, in the superconducting mixed state, injecting an input AC current yields an output DC voltage. This effect is due to the motion of the vortex lattice on periodic asymmetric pinning potentials. The vortex lattice dynamics follows ratchet effect behavior. The device shows two ratchet effects: Longitudinal and transverse. In the longitudinal ratchet effect the DC signal polarity could be switched increasing the applied magnetic field strength. Otherwise, the sign of the transverse effect does not change increasing the applied magnetic field.
Keywords :
electron beam lithography; nanotechnology; rectifiers; sputter etching; superconducting arrays; superconducting thin films; asymmetric pinning potentials; electron beam lithography; ion etching techniques; longitudinal current rectifier devices; magnetic field strength; nanodefect arrays; ratchet effect behavior; sputtering; superconducting electronic devices; superconducting films; superconducting rectifiers; transverse current rectifier devices; vortex lattice dynamics; Films; nanotechnology; rectifiers; superconducting devices;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/TASC.2009.2018060
Filename :
5153004
Link To Document :
بازگشت