• DocumentCode
    1121776
  • Title

    Anomalous subthreshold current—Voltage characteristics of n-channel SOI MOSFET´s

  • Author

    Fossum, Jerry G. ; Sundaresan, R. ; Matloubian, Mishel

  • Author_Institution
    University of Florida, Gainesville, FL
  • Volume
    8
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    544
  • Lastpage
    546
  • Abstract
    The abnormally high slopes of the subthreshold current-voltage characteristics exhibited by n-channel silicon-on-insulator (SOI) MOSFET´s are experimentally related to defect density (off-state leakage current) as well as drain voltage and channel length, and a theoretical physical description of the measured relations is presented and supported. The anomalous subthreshold behavior is attributed analytically to the (floating) body effect due to charging (biasing) by impact ionization at the drain.
  • Keywords
    CMOS technology; Current measurement; Density measurement; Impact ionization; Leakage current; Length measurement; MOSFETs; Semiconductor films; Silicon on insulator technology; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26722
  • Filename
    1487272
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1121776