DocumentCode
1121841
Title
High-speed integrated circuits using i-AlGaAs/n-GaAs doped-channel hetero-MISFET´s (DMT´s)
Author
Hida, Hikaru ; Toyoshima, Hideo ; Ogawa, Y. ; Ogawa, Yumi
Author_Institution
NEC Corporation, Kawasaki, Kanagawa, Japan
Volume
8
Issue
12
fYear
1987
fDate
12/1/1987 12:00:00 AM
Firstpage
557
Lastpage
559
Abstract
High-speed ring oscillators and divide-by-two circuits have been fabricated by using i-AlGaAs/n-GaAs doped-channel hetero-MISFET´s (DMT´s) and saturated resistors in direct-coupled FET logic (DCFL) circuit architecture for the first time. The maximum operating frequency is 3.72 GHz for dual-clocked master-slave flip-flop frequency dividers based on eight NOR gates, which consist of 0.8-µm gate enhancement-mode DMT´s with 370-mS/mm maximum transconductance. A 25-stage ring oscillator shows 24-
Keywords
FETs; Flip-flops; Frequency conversion; High speed integrated circuits; Logic circuits; Master-slave; OFDM modulation; Resistors; Ring oscillators; Transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1987.26727
Filename
1487277
Link To Document