• DocumentCode
    1121883
  • Title

    Formation of shallow p+-n junctions using boron-nitride solid diffusion source

  • Author

    Kim, Kyeong-Tae ; Kim, Choong-ki

  • Author_Institution
    Korea Advanced Institute of Science and Technology, Seoul, Korea
  • Volume
    8
  • Issue
    12
  • fYear
    1987
  • fDate
    12/1/1987 12:00:00 AM
  • Firstpage
    569
  • Lastpage
    571
  • Abstract
    Shallow p+-n junctions on the order of 0.1-µm deep have been fabricated using boron-nitride (BN) solid diffusion sources. The process combines the hydrogen-injection method and rapid thermal processing (RTP). Sheet resistivities, in ranges from 50 to 130 Ω/sq with junction depths from 0.1 to 0.19 µm, are possible in this technique. Diode characteristics of 0.11-µm junctions show low reverse leakage current, of the order of 10 nA/cm2, indicating the possibility of this method to form PMOS source-drain contacts.
  • Keywords
    Automatic speech recognition; Boron; Heating; Hydrogen; Monitoring; Nitrogen; Probes; Sandwich structures; Silicon; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26731
  • Filename
    1487281
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1121883