Abstract :
In the letter "High-Efficiency GaInAs Microwave MISFET??s," by P.D. Gardner et al., in IEEE Electron Device Letters,vol. EDL-8, pp. 443-446, September 1987, please note the following correction in the Acknowledgment section: "The authors are gratefill to Dr. F. Sterzer for his support of this project and to F. Duigon for his contributions to the development of the SAG MISFET structure."
