• DocumentCode
    1121930
  • Title

    Erratum

  • Author

    Sze, Simon M.

  • Volume
    8
  • Issue
    12
  • fYear
    1987
  • Firstpage
    586
  • Lastpage
    586
  • Abstract
    In the letter "High-Efficiency GaInAs Microwave MISFET??s," by P.D. Gardner et al., in IEEE Electron Device Letters,vol. EDL-8, pp. 443-446, September 1987, please note the following correction in the Acknowledgment section: "The authors are gratefill to Dr. F. Sterzer for his support of this project and to F. Duigon for his contributions to the development of the SAG MISFET structure."
  • Keywords
    Electron devices; MISFETs;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26736
  • Filename
    1487286
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1121930