Resonant impedance matching of Abrikosov vortex-flow transistors

Author

Hohenwarter, G.K.G. ; Martens, J.S. ; Beyer, J.B. ; Nordman, J.E.

Author_Institution

Hypres Inc., Elmsford, NY, USA

Volume

27

Issue

2

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

3215

Lastpage

3218

Abstract

Impedance matching to low input impedance flux-flow devices with transmission line resonators has been achieved. A gain of 15 dB in a 50 Ω system was predicted by simulations of the amplifier. The design, layout, and fabrication of an amplifier and an oscillator circuit are presented. Circuit layout and fabrication of YBCO- and Tl-based circuits are briefly described. Measurements performed on fabricated circuits show a gain of 10 dB at 4 GHz for an amplifier circuit and an output power of -73 dBm at 7.1 GHz for an oscillator circuit

Keywords

barium compounds; calcium compounds; flux flow; high-temperature superconductors; impedance matching; microwave amplifiers; microwave oscillators; resonators; solid-state microwave devices; strip line components; superconducting junction devices; thallium compounds; transistors; yttrium compounds; 10 to 15 dB; 4 GHz; 50 Ω system; 50 ohm; 7.1 GHz; Abrikosov vortex-flow transistors; SHF; TlBaCaCuO; YBa₂Cu₃O_x; circuit layout; design; fabrication; gain; high temperature superconductors; low input impedance flux-flow devices; microwave amplifier; oscillator circuit; output power; resonant impedance matching; three terminal devices; transmission line resonators; Circuit simulation; Distributed parameter circuits; Fabrication; Gain; Impedance matching; Oscillators; Power amplifiers; Power transmission lines; Predictive models; Resonance;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.133895

Filename

133895