• DocumentCode
    1122162
  • Title

    Theoretical analysis and fabrication of antireflection coatings on laser-diode facets

  • Author

    Saitoh, Tadashi ; Mukai, Takaaki ; Mikami, Osamu

  • Author_Institution
    NTT Basic Research Laboratories, Musashino-shi, Tokyo, Japan
  • Volume
    3
  • Issue
    2
  • fYear
    1985
  • fDate
    4/1/1985 12:00:00 AM
  • Firstpage
    288
  • Lastpage
    293
  • Abstract
    Reflectivity of an antireflection-(AR) coated laser-diode (LD) facet is analyzed on the basis of a slab waveguide model and an angular spectrum approach. The reflectivities of single- and double-layer AR coatings on 1.55-μm GaInAsP/InP LD\´s are numerically calculated. Optimum film parameters, such as thickness and refractive index of single-layer AR coating films, are obtained as functions of the active layer thickness. A minimum reflectivity as low as 1 \\times 10^{-4} was realized using refractive index controlled SiOxfilm as an AR coating for a 1.55-μm GaInAsP/InP buried-heterostructure (BH) LD.
  • Keywords
    Semiconductor lasers; Coatings; Indium phosphide; Laser modes; Laser theory; Optical device fabrication; Optical films; Reflectivity; Refractive index; Slabs; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.1985.1074202
  • Filename
    1074202
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1122162