DocumentCode :
1122162
Title :
Theoretical analysis and fabrication of antireflection coatings on laser-diode facets
Author :
Saitoh, Tadashi ; Mukai, Takaaki ; Mikami, Osamu
Author_Institution :
NTT Basic Research Laboratories, Musashino-shi, Tokyo, Japan
Volume :
3
Issue :
2
fYear :
1985
fDate :
4/1/1985 12:00:00 AM
Firstpage :
288
Lastpage :
293
Abstract :
Reflectivity of an antireflection-(AR) coated laser-diode (LD) facet is analyzed on the basis of a slab waveguide model and an angular spectrum approach. The reflectivities of single- and double-layer AR coatings on 1.55-μm GaInAsP/InP LD\´s are numerically calculated. Optimum film parameters, such as thickness and refractive index of single-layer AR coating films, are obtained as functions of the active layer thickness. A minimum reflectivity as low as 
was realized using refractive index controlled SiOx film as an AR coating for a 1.55-μm GaInAsP/InP buried-heterostructure (BH) LD.
was realized using refractive index controlled SiOKeywords :
Semiconductor lasers; Coatings; Indium phosphide; Laser modes; Laser theory; Optical device fabrication; Optical films; Reflectivity; Refractive index; Slabs; Waveguide lasers;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1985.1074202
Filename :
1074202
Link To Document :
