Fabrication and electrical characterization of NbN-interfacial layer-Si contact diodes

Author

Wu, Songjian ; Butler, Donald P.

Author_Institution

Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA

Volume

27

Issue

2

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

3276

Lastpage

3279

Abstract

Nb and NbN-SiO₂-Si Schottky contact diodes were fabricated on chemically cleaned Si substrates by RF magnetron sputtering in Ar and Ar-N₂ ambients, respectively. The electrical behavior of the contact diodes was investigated by current-voltage and capacitance-voltage measurements over the temperature range of 10 to 300 K. The Nb contact diodes fabricated on p-type Si substrates have good Schottky barrier diode behavior. The NbN Schottky diodes on both n-type and p-type substrates exhibited lower quality behavior than their Nb counterparts. The electrical measurements have determined the barrier height of both the Nb-Si and NbN-Si systems. The low-temperature characterization yielded lower diffusion potentials than predicted by the theory of F.A. Padovani and R. Stratton (1966)

Keywords

Schottky-barrier diodes; elemental semiconductors; metal-insulator-semiconductor devices; niobium compounds; silicon; silicon compounds; sputtered coatings; superconducting junction devices; 10 to 300 K; Ar; Ar-N₂; N₂; NbN-SiO₂-Si; RF magnetron sputtering; Schottky barrier diode behavior; Schottky contact diodes; Si; barrier height; capacitance-voltage measurements; current voltage measurement; diffusion potentials; low-temperature characterization; Chemicals; Contacts; Electric variables measurement; Fabrication; Niobium; Radio frequency; Schottky barriers; Schottky diodes; Sputtering; Temperature measurement;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.133912

Filename

133912