Numerical Simulation of Metal Plasma Immersion Ion Implantation and Deposition on a Dielectric Wedge

Plasma immersion ion implantation (PIII) of a dielectric object is not straightforward to simulate because the surface will be charged during the process. The one-dimensional analytic equation developed by Emmert [J. Vac. Sci. Technol. B Microelectron. Process. Phenom., vol. 12, pp. 880, 1994] cannot be applied to a two-three-dimensional dielectric object. In this paper, the author develops a numerical model that can handle the surface charging effect of a complex dielectric object. The model is used to simulate the metal PIII and deposition of a dielectric wedge. The potential of the internal volume of the wedge is solved by Laplace´s equation, the boundary between the wedge and metal plasma is handled by Gauss´ law, and the bulk metal plasma region is simulated by the hybrid model of particle-in-cell ions and Boltzmann distribution of electrons. It shows that the equilibrium steady-state ion sheath formed by the sample stage biased at -8 kV is modified by the thinner dielectric wedge with the height of 0.03 m. The tip of the dielectric wedge is touched by the main stream of the metal plasma