Foreword Special Issue on Wide Bandgap Power Switching Devices for Energy Efficiency and Renewable Energy Integration

Wide bandgap (WBG) semiconductors, especially silicon carbide (SiC) and gallium nitride (GaN), promise transformational advances in electrical power systems, with increased power conversion efficiency for transportation and renewable energy utilization. Compared with the semiconductor silicon, SiC and GaN materials offer significantly higher electrical and thermal conductivities, increased avalanche breakdown field strength, and improved ruggedness under extreme environmental operating conditions. These basic material properties translate into more compact and lightweight power conversion systems with significant energy savings, much improved signal sensing and transmission characteristics, and longer operating life in the field.