DocumentCode :
1122826
Title :
Influence of 
Flow Rate on Structure and Properties of 
Films Prepared by Cathodic-Vacuum-Arc Ion Deposition System
Flow Rate on Structure and Properties of Films Prepared by Cathodic-Vacuum-Arc Ion Deposition SystemAuthor :
Changxi Zheng ; Daoyun Zhu ; Dihu Chen ; Zhenhui He ; Wen, Lijie ; Cheung, W.Y. ; Wong, S.P.
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Guangzhou
Volume :
34
Issue :
4
fYear :
2006
Firstpage :
1099
Lastpage :
1104
Abstract :
Magnesium-oxide (MgOx) films have been prepared by a cathodic-vacuum-arc ion deposition system operated in an intermediate frequency pulse mode of substrate bias voltage at a mixed atmosphere of O2 and Ar. The O2 flow was adjusted in a range of 180-240 sccm at a fixed O2/Ar flow rate of 20. The structure, composition, morphology, and optical properties of the samples were analyzed by X-ray diffraction, Rutherford backscattering technique, atomic force microscopy, and UV-visible absorption spectra, respectively. Results show that the crystal orientation and grain size of the samples strongly depends on O2 flow rate. Growth of Magnesium-oxide films prefers MgO (200) and MgO (220) orientation at a smaller and larger O2 flow rate of 180 and 220 sccm, respectively. Transparent MgOx films used as the protective layer for alternating-current plasma display panel are obtained at optimal deposition conditions
Keywords :
Rutherford backscattering; X-ray diffraction; atomic force microscopy; crystal orientation; grain size; magnesium compounds; plasma deposited coatings; plasma deposition; plasma displays; protective coatings; surface morphology; texture; transparency; ultraviolet spectra; vacuum arcs; vacuum deposited coatings; vacuum deposition; visible spectra; MgO (200) preferred orientation; MgO (220) preferred orientation; MgOx; Rutherford backscattering; Si; SiO2; UV-visible absorption spectra; X-ray diffraction; alternating-current plasma display panel protective layer; atomic composition; atomic force microscopy; cathodic-vacuum-arc ion deposition system; crystal orientation; film structure; glass substrate; grain size; magnesium-oxide film; optical properties; oxygen flow rate; oxygen-argon atmosphere; silicon substrate; substrate bias voltage intermediate frequency pulse mode; surface morphology; transparent film; Argon; Atmosphere; Atom optics; Atomic force microscopy; Frequency; Grain size; Morphology; Optical films; Optical microscopy; Voltage; MgO films; X-ray diffraction (XRD); plasma display panel (PDP); vacuum arc;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2006.876488
Filename :
1673490
Link To Document :
