Title :
A 2.4/3.5/4.9/5.2/5.7-GHz concurrent multiband low noise amplifier using InGaP/GaAs HBT technology
Author :
Lin, Yu-Tso ; Lu, Shey-Shi
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A 2.4/3.5/4.9/5.2/5.7-GHz concurrent multiband low noise amplifier using InGaP/GaAs HBT technology is demonstrated for the first time. Multiband input matching is achieved by newly developed capacitive feedback instead of traditional inductive feedback technique. The experimental results showed that input return loss of -12, -16, -14, -13, and -12 dB, voltage gain of 29, 27, 24, 23.6, and 22.5 dB and noise figure of 2.89, 2.76, 2.95, 2.98, and 3.1 dB were obtained at 2.4/3.5/4.9/5.2/5.7 GHz, respectively.
Keywords :
III-V semiconductors; amplifiers; heterojunction bipolar transistors; indium compounds; radiofrequency integrated circuits; wireless LAN; 12 dB; 13 dB; 14 dB; 16 dB; 2.4 GHz; 2.76 dB; 2.89 dB; 2.95 dB; 2.98 dB; 22.5 dB; 23.6 dB; 24 dB; 27 dB; 29 dB; 3.1 dB; 3.5 GHz; 4.9 GHz; 5.2 GHz; 5.7 GHz; HBT technology; InGaP-GaAs; RF circuit; capacitive feedback; inductive feedback; multiband input matching; multiband low noise amplifier; wireless local area network; wireless local loop; Capacitance; Circuits; Feedback; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Inductors; Low-noise amplifiers; Wireless LAN; RF circuit; WLAN; WLL; wireless local area network; wireless local loop;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2004.834548
