Effect of Ion Implantation on DLC Preparation Using PBIID Process

This paper discusses the effects of ion implantation on a diamond-like carbon (DLC) preparation using a hybrid process of plasma-based ion implantation and deposition (PBIID) using superimposed RF and negative high-voltage pulses. Adhesion strength of a DLC film on A-5052 and SUS304 was enhanced by carbon ion implantation to substrate materials. Cross section of interface between the DLC film and substrate was observed by scanning transmission electron microscopy (STEM) and analyzed by energy dispersive X-ray spectroscopy (EDS). It was found that the amorphouslike mixing layer of graded carbon component and substrate materials was produced in the ion-implanted region of substrate and the oxide layer on the substrate surface was destroyed. Besides the reduction of residual stress in the DLC film, the formation of amorphouslike mixing layer and the destruction of oxide layer led to the enhancement in adhesion strength of the DLC film. Residual stress, sp³ fraction, hardness, density, and hydrogen content of the DLC films deposited from acetylene and toluene plasma have the variation with negative pulsed voltage for ion implantation