RF Small-Signal Analysis of Schottky-Barrier p-MOSFET

Author

Valentin, Raphaël ; Dubois, Emmanuel ; Raskin, Jean-Pierre ; Larrieu, Guilhem ; Dambrine, Gilles ; Lim, Tao Chuan ; Breil, Nicolas ; Danneville, François

Author_Institution

Inst. d´´Electron. de Microelectron. et de Nanotechnol., Villeneuve d´´Ascq

Volume

55

Issue

5

fYear

2008

fDate

5/1/2008 12:00:00 AM

Firstpage

1192

Lastpage

1202

Abstract

This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer -parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted and discussed for a -gate-length SB MOSFET. Then, using ac simulations, HF FoM´s sensitivity along SB height and underlap length variations are subsequently presented. The whole study provides, for SB MOSFETs, a deep understanding of key ac-element (transconductances and capacitances) behavior as well as process-parameter optimization to achieve the best HF FoMs.

Keywords

MOSFET; S-parameters; Schottky barriers; capacitance; HF FoM sensitivity; RF small-signal analysis; SB height; ac simulations; ac- element; capacitances; high-frequency figures-of-merit; on-wafer S-parameters; small-signal equivalent circuits; source-drain Schottky-barrier MOSFET; transconductances; underlap length variations; Associate members; CMOS technology; Capacitance; Circuit simulation; Equivalent circuits; Hafnium; MOSFET circuits; Radio frequency; Scattering parameters; Silicon on insulator technology; High frequency (HF); MOSFETs; Schottky barrier (SB); silicon; silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.919382

Filename

4483714