DocumentCode :
1123111
Title :
A balanced Ka-Band GaAs FET MMIC frequency doubler
Author :
Abdo-Tuko, Mohammed ; Bertenburg, Ralf ; Wolff, Ingo
Author_Institution :
Duisburg Univ., Germany
Volume :
4
Issue :
7
fYear :
1994
fDate :
7/1/1994 12:00:00 AM
Firstpage :
217
Lastpage :
219
Abstract :
A simplified and miniaturized state-of-the-art balanced GaAs FET MMIC frequency doubler operating at 36 GHz has been designed and realized in coplanar waveguide technology. The passive part of the circuit is designed using an effective, in-house developed quasi-static finite-difference method for the analysis of coplanar structures while the active device is characterized by using the Curtice-Ettenberg model. The model makes use of the measured electrical values of the transistor and interprets them through approximate empirical formulas. The results obtained demonstrate that by using simple models, which require very little computation time, it is possible to design an efficient frequency doubler in the Ka-band with a maximum conversion gain of 3 to 6 dB, without the need of using complicated transistor models or circuitry.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; finite difference methods; frequency multipliers; gallium arsenide; linear integrated circuits; 3 to 6 dB; 36 GHz; Curtice-Ettenberg model; GaAs; GaAs FET MMIC; Ka-Band; balanced frequency doubler; coplanar waveguide technology; maximum conversion gain; measured electrical values; quasi-static finite-difference method; Circuit testing; Coplanar waveguides; Electric variables measurement; Equivalent circuits; FETs; Field effect MMICs; Finite difference methods; Frequency conversion; Gallium arsenide; Voltage;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.298245
Filename :
298245
Link To Document :
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