Title :
Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiOx films
Author :
Chang-Kyu Lee ; Hong Yoon Jung ; Se Yeob Park ; Byeong Geun Son ; Chul-Kyu Lee ; Hyo Jin Kim ; Rino Choi ; Kim, Dae-hwan ; Jong-Uk Bae ; Woo-Sup Shin ; Jae Kyeong Jeong
Author_Institution :
Dept. of Mater. Sci. & Eng., Inha Univ., Incheon, South Korea
Abstract :
This letter examined the insertion effect of thermal TiO2 films on the device performance and photo-bias instability of zinc tin oxide (ZTO) thin-film transistors (TFTs). A 5.0-nm-thick TiOx device inserted at the ZTO/silicon nitride (SiNx) interface exhibited slightly lower mobility (9.4 cm2/V·s ) compared with that (14.1 cm2/V·s ) of the reference device with a ZTO/SiNx stack. On the other hand, the negative gate-bias-illumination-stress-induced instability of the TiOx-inserted device was strongly suppressed from 11.0 V (reference device) to 3.0 V. This was attributed to the increase in valence band offset between TiOx and ZTO films, leading to the diminished injection of photo-induced hole carriers into the underlying SiNx bulk region.
Keywords :
thin film transistors; tin compounds; titanium compounds; zinc compounds; TFT; TiO2; TiOx; ZnSnO; insertion effect; negative gate-bias-illumination-stress-induced instability; photo-induced hole carriers; size 5.0 nm; thermal films; thin-film transistors; valence band offset; voltage 11.0 V to 3.0 V; Logic gates; NIST; Oxidation; Thermal stability; Thin film transistors; Zinc; Photo-bias stability; thermal oxidation; thin-film transistors (TFTs); titanium oxide; zinc tin oxide (ZTO);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2230242
