Title :
Wide-band GaInAs MISFET amplifiers
Author :
Bechtle, D. ; Upadhyayula, L.C. ; Gardner, P.D. ; Narayan, S.Y.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
fDate :
10/1/1989 12:00:00 AM
Abstract :
The authors present the first reported results on wideband GaInAs MISFET amplifiers. Using 1-μm-gate-length, 0.56-mm-gate-width GaInAs MISFETs, they obtained: (a) a power output of 230±30 mW (0.41 W/mm) with 33±3% power-added efficiency; (b) a power output of 265±15 mW (0.47 W/mm) with 30±3% power-added efficiency (both over the 7-11-GHz band), and (c) a power output of 220±45 mW (0.39 W/mm) with 32±4% power-added efficiency over the 6-12-GHz band. With a 0.7-μm-gate-length GaInAs MISFET, a small-signal gain of 5±0.5 dB over the 11.4-22.6-GHz band was obtained. These data include all connector, bias network, and circuit losses. The authors present an equivalent circuit model of these MISFETs based on S-parameter measurements. The model is essentially that of a MISFET with capacitors representing gate-to-source and gate-to-drain overlap capacitances added at input and output
Keywords :
III-V semiconductors; equivalent circuits; field effect transistor circuits; gallium arsenide; indium compounds; microwave amplifiers; solid-state microwave circuits; wideband amplifiers; 0.7 to 1 micron; 220 to 265 mW; 29 to 33 percent; 5 dB; 7 to 22.6 GHz; GaInAs; III-V semiconductor; MISFET amplifiers; S-parameter measurements; SHF; equivalent circuit model; microwave amplifiers; power-added efficiency; small-signal gain; wideband; Broadband amplifiers; Capacitance; Capacitors; Equivalent circuits; FETs; Gallium arsenide; MESFETs; MISFETs; Microwave devices; Scattering parameters;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
