DocumentCode :
1123400
Title :
SiCl4 reactive ion etching for GaAs optical waveguides
Author :
Sonek, Greogory J. ; Jian-zhong, Li ; Wolf, Edward D. ; Ballantyne, Joseph Merrill
Author_Institution :
Cornell Univ., Ithaca, NY, USA
Volume :
3
Issue :
5
fYear :
1985
fDate :
10/1/1985 12:00:00 AM
Firstpage :
1147
Lastpage :
1150
Abstract :
Anisotropic reactive ion etching (RIE) in a SiCl4 :Ar gas discharge has, for the first time, been applied to the fabrication of straight, curved, and branching optical waveguiding structures in GaAs. In the low-pressure (2-10 mT) low-power (∼ 100 W) etching regime, high resolution geometries have been patterned which display linewidth control and sidewall definition that is superior to other etching techniques. Losses of 2,7 and 2.6 dB/cm have been realized for 6- and 10-μm straight rib waveguides (RWG), respectively, at 
m.
m.Keywords :
Integrated optics; Optical waveguides; Plasma applications, materials processing; Anisotropic magnetoresistance; Argon; Discharges; Displays; Etching; Gallium arsenide; Geometrical optics; Optical device fabrication; Optical losses; Particle beam optics;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1985.1074325
Filename :
1074325
Link To Document :
