• DocumentCode
    1123577
  • Title

    Optoelectronic components for multigigabit systems

  • Author

    Good, Robert C. ; Debney, B.T. ; Rees, Graham J. ; Buus, Jens

  • Author_Institution
    Plessey Research (Caswell), Ltd., Northants, England
  • Volume
    3
  • Issue
    6
  • fYear
    1985
  • fDate
    12/1/1985 12:00:00 AM
  • Firstpage
    1170
  • Lastpage
    1179
  • Abstract
    Gigabit data rates are becoming relevant for several applications areas, including computer interconnections, trunk telecommunications, and phased-array radar control. LED\´s, lasers, p-i-n FET\´s, photoconductors, and avalanche photodiodes are candidate components. Silicon NMOS, bipolar, GaAs FET, and heterojunction bipolar logic IC technologies are all appropriate and no obstacles are apparent to prevent direct modulation to \\sim10-20 Gbit/s. Wavelength multiplexing will impact strongly in several applications enabling complex new system architectures. Increasing speed and complexity will drive technology to higher optoelectronic integration levels.
  • Keywords
    FETs (field-effect transistors); Light-emitting diodes (LED´s); Optical fiber receivers; Optical fiber transmitters, lasers; Application software; Avalanche photodiodes; Computer applications; FETs; Laser radar; PIN photodiodes; Photoconductivity; Radar applications; Telecommunication computing; Telecommunication control;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.1985.1074343
  • Filename
    1074343