DocumentCode
1123577
Title
Optoelectronic components for multigigabit systems
Author
Good, Robert C. ; Debney, B.T. ; Rees, Graham J. ; Buus, Jens
Author_Institution
Plessey Research (Caswell), Ltd., Northants, England
Volume
3
Issue
6
fYear
1985
fDate
12/1/1985 12:00:00 AM
Firstpage
1170
Lastpage
1179
Abstract
Gigabit data rates are becoming relevant for several applications areas, including computer interconnections, trunk telecommunications, and phased-array radar control. LED\´s, lasers, p-i-n FET\´s, photoconductors, and avalanche photodiodes are candidate components. Silicon NMOS, bipolar, GaAs FET, and heterojunction bipolar logic IC technologies are all appropriate and no obstacles are apparent to prevent direct modulation to
Gbit/s. Wavelength multiplexing will impact strongly in several applications enabling complex new system architectures. Increasing speed and complexity will drive technology to higher optoelectronic integration levels.
Gbit/s. Wavelength multiplexing will impact strongly in several applications enabling complex new system architectures. Increasing speed and complexity will drive technology to higher optoelectronic integration levels.Keywords
FETs (field-effect transistors); Light-emitting diodes (LED´s); Optical fiber receivers; Optical fiber transmitters, lasers; Application software; Avalanche photodiodes; Computer applications; FETs; Laser radar; PIN photodiodes; Photoconductivity; Radar applications; Telecommunication computing; Telecommunication control;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.1985.1074343
Filename
1074343
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