Title :
Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments
Author :
Gaillardin, M. ; Girard, S. ; Paillet, P. ; Leray, J.L. ; Goiffon, Vincent ; Magnan, Pierre ; Marcandella, C. ; Martinez, Manuel ; Raine, M. ; Duhamel, O. ; Richard, N. ; Andrieu, F. ; Barraud, S. ; Faynot, O.
Author_Institution :
CEA, DAM, Arpajon, France
Abstract :
This paper investigates the TID sensitivity of silicon-based technologies at several MGy irradiation doses to evaluate their potential for high TID-hardened circuits. Such circuits will be used in several specific applications suc as safety systems of current or future nuclear power plants considering various radiation environments including normal and accidental operating conditions, high energy physics instruments, fusion experiments or deep space missions. Various device designs implemented in well established bulk silicon and Partially Depleted SOI technologies are studied here up to 3 MGy. Furthermore, new insights are given on the vulnerability of more advanced technologies including planar Fully Depleted SOI and multiple-gate SOI transistors at such high dose. Potential of tested technologies are compared and discussed for stand-alone integrated circuits.
Keywords :
CMOS integrated circuits; elemental semiconductors; radiation hardening (electronics); silicon; MGy dose environment; MGy irradiation doses; Si; TID sensitivity; TID-hardened circuit; accidental operating condition; advanced CMOS technologies; deep space mission; device design; fusion experiment; high energy physics instrument; multiple-gate SOI transistor; normal operating condition; nuclear power plant; partially depleted SOI technologies; planar fully depleted SOI; radiation environment; safety system; silicon-based technologies; stand-alone integrated circuit; total ionizing dose; CMOS integrated circuits; CMOS technology; Charge carrier processes; Logic gates; Radiation effects; Silicon; Transistors; Bulk silicon; FinFET; MGy irradiation; SOI; TID; fully depleted; multiple-gate transistors; nanowire; partially depleted;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2249095
