• DocumentCode
    1123734
  • Title

    Direct measurement of infrared photo-elastic constants of silicon

  • Author

    Pedinoff, M. ; Seguin, H.

  • Author_Institution
    Hughes Research Labs., Malibu, CA, USA
  • Volume
    3
  • Issue
    1
  • fYear
    1967
  • fDate
    1/1/1967 12:00:00 AM
  • Firstpage
    31
  • Lastpage
    32
  • Abstract
    The elasto-optic constants of single-crystal silicon were determined at 3.39μ, through measurement of the diffraction grating and transduction efficiency of an ultrasonic traveling-wave modulation device operating at 30 MHz. The values of elasto-optic constants found were P_{11} = 0.081, P_{12} = 0.010, P_{44} = 0.075 .
  • Keywords
    Acoustic beams; Optical attenuators; Optical devices; Optical modulation; Optical refraction; Optical scattering; Radio frequency; Silicon; Tensile stress; Ultrasonic variables measurement;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1967.1074360
  • Filename
    1074360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1123734