DocumentCode :
1123734
Title :
Direct measurement of infrared photo-elastic constants of silicon
Author :
Pedinoff, M. ; Seguin, H.
Author_Institution :
Hughes Research Labs., Malibu, CA, USA
Volume :
3
Issue :
1
fYear :
1967
fDate :
1/1/1967 12:00:00 AM
Firstpage :
31
Lastpage :
32
Abstract :
The elasto-optic constants of single-crystal silicon were determined at 3.39μ, through measurement of the diffraction grating and transduction efficiency of an ultrasonic traveling-wave modulation device operating at 30 MHz. The values of elasto-optic constants found were 
.
.Keywords :
Acoustic beams; Optical attenuators; Optical devices; Optical modulation; Optical refraction; Optical scattering; Radio frequency; Silicon; Tensile stress; Ultrasonic variables measurement;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1967.1074360
Filename :
1074360
Link To Document :
