Title :
Simulation of a novel, radiation-resistant active pixel sensor in a standard 0.25 μm CMOS technology
Author :
Villani, Enrico Giulio ; Allport, P.P. ; Casse, G. ; Evans, A. ; Tyndel, M. ; Turchetta, R. ; Velthuis, J.J.
Author_Institution :
Rutherford Appleton Lab., Didcot, UK
fDate :
6/1/2005 12:00:00 AM
Abstract :
CMOS monolithic active pixel sensors are currently developed for particle physics vertex detectors. Their radiation resistance has already been proved to be high enough for the devices to be used at machines like the linear collider, where the radiation fluence is expected to be of the order of 1012 proton/cm2. However, in order to address more radiation-harsh environments, we proposed a novel sensor structure based on the deep n-well, which is found in triple-well CMOS technologies. Potential benefits arising from this technology are investigated and simulation results for standard and novel structures compared.
Keywords :
CMOS image sensors; position sensitive particle detectors; radiation effects; CMOS monolithic active pixel sensors; deep n-well; minimum ionizing particle; particle physics vertex detectors; radiation fluence; radiation resistance; radiation-harsh environments; standard 0.25 CMOS technology; triple-well CMOS technologies; CMOS image sensors; CMOS technology; Costs; Energy consumption; Helium; Ionizing radiation sensors; Pixel; Predictive models; Radiation detectors; Standards development; Minimum ionizing particle; monolithic active pixel sensors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.850980
